JPH0568545B2 - - Google Patents

Info

Publication number
JPH0568545B2
JPH0568545B2 JP59079231A JP7923184A JPH0568545B2 JP H0568545 B2 JPH0568545 B2 JP H0568545B2 JP 59079231 A JP59079231 A JP 59079231A JP 7923184 A JP7923184 A JP 7923184A JP H0568545 B2 JPH0568545 B2 JP H0568545B2
Authority
JP
Japan
Prior art keywords
plasma generation
metal
containing substance
ions
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59079231A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60221566A (ja
Inventor
Mamoru Sato
Koichi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Kyocera Corp filed Critical Agency of Industrial Science and Technology
Priority to JP59079231A priority Critical patent/JPS60221566A/ja
Priority to US06/724,188 priority patent/US4657774A/en
Publication of JPS60221566A publication Critical patent/JPS60221566A/ja
Priority to US06/822,814 priority patent/US4676194A/en
Publication of JPH0568545B2 publication Critical patent/JPH0568545B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP59079231A 1984-04-18 1984-04-18 薄膜形成装置 Granted JPS60221566A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59079231A JPS60221566A (ja) 1984-04-18 1984-04-18 薄膜形成装置
US06/724,188 US4657774A (en) 1984-04-18 1985-04-17 Method for thin film formation
US06/822,814 US4676194A (en) 1984-04-18 1986-01-27 Apparatus for thin film formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59079231A JPS60221566A (ja) 1984-04-18 1984-04-18 薄膜形成装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6780485A Division JPS60223113A (ja) 1985-03-30 1985-03-30 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS60221566A JPS60221566A (ja) 1985-11-06
JPH0568545B2 true JPH0568545B2 (en]) 1993-09-29

Family

ID=13684105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59079231A Granted JPS60221566A (ja) 1984-04-18 1984-04-18 薄膜形成装置

Country Status (2)

Country Link
US (2) US4657774A (en])
JP (1) JPS60221566A (en])

Families Citing this family (58)

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US4882198A (en) * 1986-11-26 1989-11-21 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
JPS63215578A (ja) * 1987-02-28 1988-09-08 株式会社豊田中央研究所 セラミツク材料表面への固体潤滑被膜の形成方法
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US4816291A (en) * 1987-08-19 1989-03-28 The Regents Of The University Of California Process for making diamond, doped diamond, diamond-cubic boron nitride composite films
DE3839903A1 (de) * 1987-11-25 1989-06-08 Mitsubishi Electric Corp Verfahren und vorrichtung zum aufdampfen von duennschichten
US4902572A (en) * 1988-04-19 1990-02-20 The Boeing Company Film deposition system
US4883686A (en) * 1988-05-26 1989-11-28 Energy Conversion Devices, Inc. Method for the high rate plasma deposition of high quality material
US5133849A (en) * 1988-12-12 1992-07-28 Ricoh Company, Ltd. Thin film forming apparatus
US4951604A (en) * 1989-02-17 1990-08-28 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
JPH03111578A (ja) * 1989-06-29 1991-05-13 Toshiba Corp 薄膜形成方法及び薄膜形成装置
DE3931565C1 (en]) * 1989-09-22 1991-01-24 Dornier Luftfahrt Gmbh, 8000 Muenchen, De
US5114559A (en) * 1989-09-26 1992-05-19 Ricoh Company, Ltd. Thin film deposition system
JP2786283B2 (ja) * 1989-12-22 1998-08-13 株式会社日立製作所 表面改質方法およびその装置並びに表面改質基材
DE4126851A1 (de) * 1991-08-14 1993-02-18 Krupp Widia Gmbh Werkzeug mit verschleissfester schneide aus kubischem bornitrid oder polykristallinem kubischem bornitrid, verfahren zu dessen herstellung sowie dessen verwendung
DE4128547A1 (de) * 1991-08-28 1993-03-04 Leybold Ag Verfahren und vorrichtung fuer die herstellung einer entspiegelungsschicht auf linsen
DE4204650C1 (en]) * 1992-02-15 1993-07-08 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US6475333B1 (en) * 1993-07-26 2002-11-05 Nihon Shinku Gijutsu Kabushiki Kaisha Discharge plasma processing device
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
WO1995034092A1 (en) * 1994-06-03 1995-12-14 Materials Research Corporation A method of nitridization of titanium thin films
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
US5518780A (en) * 1994-06-16 1996-05-21 Ford Motor Company Method of making hard, transparent amorphous hydrogenated boron nitride films
JPH09112448A (ja) * 1995-10-18 1997-05-02 Matsushita Electric Ind Co Ltd スクロール圧縮機
US6827824B1 (en) 1996-04-12 2004-12-07 Micron Technology, Inc. Enhanced collimated deposition
US5885666A (en) * 1997-05-06 1999-03-23 General Motors Corporation Conversion of hexagonal-like BN to cubic-like BN by ion implantation
JP3599564B2 (ja) 1998-06-25 2004-12-08 東京エレクトロン株式会社 イオン流形成方法及び装置
US6200649B1 (en) * 1999-07-21 2001-03-13 Southwest Research Institute Method of making titanium boronitride coatings using ion beam assisted deposition
US20050208218A1 (en) * 1999-08-21 2005-09-22 Ibadex Llc. Method for depositing boron-rich coatings
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
JP4504511B2 (ja) 2000-05-26 2010-07-14 忠弘 大見 プラズマ処理装置
JP4621333B2 (ja) * 2000-06-01 2011-01-26 ホーチキ株式会社 薄膜形成方法
TW521386B (en) * 2000-06-28 2003-02-21 Mitsubishi Heavy Ind Ltd Hexagonal boron nitride film with low dielectric constant, layer dielectric film and method of production thereof, and plasma CVD apparatus
US6596399B2 (en) 2000-12-04 2003-07-22 Guardian Industries Corp. UV absorbing/reflecting silver oxide layer, and method of making same
JP4078084B2 (ja) * 2002-01-28 2008-04-23 キヤノン株式会社 イオン化成膜方法及び装置
KR100476370B1 (ko) * 2002-07-19 2005-03-16 주식회사 하이닉스반도체 배치형 원자층증착장치 및 그의 인시튜 세정 방법
US7421973B2 (en) * 2003-11-06 2008-09-09 Axcelis Technologies, Inc. System and method for performing SIMOX implants using an ion shower
TWI603916B (zh) 2005-08-30 2017-11-01 恩特葛瑞斯股份有限公司 利用選擇性氟化硼前驅物之硼離子植入方法，及供植入用 之大群氫化硼之形成方法
US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
EP1947210A1 (fr) * 2007-01-16 2008-07-23 ARCELOR France Procede de revetement d'un substrat, installation de mise en oeuvre du procede et dispositif d'alimentation en metal d'une telle installation
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
TW201110831A (en) * 2009-09-03 2011-03-16 Chunghwa Picture Tubes Ltd Plasma apparatus and method of fabricating nano-crystalline silicon thin film
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) * 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI466179B (zh) 2010-02-26 2014-12-21 Advanced Tech Materials 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
EP2612349A4 (en) 2010-08-30 2016-09-14 Entegris Inc DEVICE AND METHOD FOR PRODUCING COMPOUNDS OR INTERMEDIATE PRODUCTS THEREOF FROM A SOLID MATERIAL AND USE OF SUCH CONNECTIONS AND INTERMEDIATE PRODUCTS
US8828504B2 (en) * 2010-12-17 2014-09-09 International Business Machines Corporation Deposition of hydrogenated thin film
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
CN103122449B (zh) * 2011-11-21 2017-02-15 管炜 离化装置及应用离化装置的镀膜装置
KR20200098716A (ko) 2012-02-14 2020-08-20 엔테그리스, 아이엔씨. 주입 빔 및 소스 수명 성능 개선을 위한 탄소 도판트 기체 및 동축류
US11062906B2 (en) 2013-08-16 2021-07-13 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
US9287085B2 (en) * 2014-05-12 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Processing apparatus and method of treating a substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435920B2 (en]) * 1974-06-10 1979-11-06
GB1483966A (en) * 1974-10-23 1977-08-24 Sharp Kk Vapourized-metal cluster ion source and ionized-cluster beam deposition
US4161418A (en) * 1975-06-27 1979-07-17 Futaba Denshi Kogyo K. K. Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers
US4218495A (en) * 1975-07-18 1980-08-19 Futaba Denshi Kogyo K.K. Schottky barrier type solid-state element
AU531847B2 (en) * 1979-02-23 1983-09-08 Sekisui Kagaku Kogyo Kabushiki Kaisha Magnetic recording medium + process for production thereof

Also Published As

Publication number Publication date
US4657774A (en) 1987-04-14
JPS60221566A (ja) 1985-11-06
US4676194A (en) 1987-06-30

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